DocumentCode
3195963
Title
Fast recovery diodes - reverse recovery behaviour and dynamic avalanche
Author
Lutz, Josef
Author_Institution
Fac. of Electr. Eng., Chemnitz Univ. of Technol., Germany
Volume
1
fYear
2004
fDate
16-19 May 2004
Firstpage
11
Abstract
This paper deals with the dynamics of the internal charge carriers during the reverse recovery process of a fast power diode. For two conditions, simplified approximations are given for analytical investigation, and parameters for achieving soft recovery are derived. Finally, both conditions are investigated with regard to dynamic ruggedness.
Keywords
carrier density; carrier mobility; power semiconductor diodes; power semiconductor switches; semiconductor device models; dynamic avalanche; fast recovery diodes; internal charge carriers; reverse recovery behaviour; Analytical models; Charge carriers; Circuits; Diodes; Doping; Plasma density; Plasma sources; Power electronics; Tail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314549
Filename
1314549
Link To Document