Title :
Interdiffusion of CdS/CdTe in laser-deposited and RF sputtered alloys, bilayers and solar cells
Author :
Fischer, A. ; Narayanswamy, C. ; Grecu, D.S. ; Bykov, E. ; Nance, S.A. ; Jayamaha, U.N. ; Contreras-Puenta, G. ; Compaan, A.D. ; Stan, Mark A. ; Mason, Alice R.
Author_Institution :
Dept. of Phys. & Astron., Toledo Univ., OH, USA
Abstract :
We have studied interdiffusion between CdS and CdTe in solar cells, bilayers, and in alloy films by Rutherford backscattering (RBS), Raman scattering, photoluminescence (PL), optical absorption and X-ray diffraction. The cells and films were fabricated by laser physical vapor deposition (LPVD) or by RF sputtering (RFS). We also have prepared films of the ternary alloy material (CdSxTe1-x) by LPVD, related film composition to target composition by WDS, and obtained values for band bowing, lattice constant, phonon frequencies, and low temperature PL characteristics. The RBS spectra, obtained from thin bilayers of CdTe/CdS on fused silica, provide information on interdiffusion with ~200 Å depth resolution
Keywords :
II-VI semiconductors; Raman spectroscopy; Rutherford backscattering; X-ray diffraction; cadmium compounds; chemical interdiffusion; laser deposition; lattice constants; light absorption; photoluminescence; semiconductor thin films; solar cells; sputtered coatings; CdS-CdTe; CdS/CdTe diffusion; CdSxTe1-x; Raman scattering; Rutherford backscattering; X-ray diffraction; alloy films; band bowing; bilayers; film composition; fused silica; laser physical vapor deposition; laser-deposited alloys; lattice constant; low temperature photoluminescence characteristics; optical absorption; phonon frequencies; photoluminescence; solar cells; target composition; ternary alloy material; Backscatter; Electromagnetic wave absorption; Laser theory; Optical films; Optical scattering; Photoluminescence; Photovoltaic cells; Radio frequency; Raman scattering; X-ray lasers;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564279
