A dual-polarity SCR for RF IC ESD protection

Author

Liu, Jian ; Chen, Hongyi

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing

fYear

2008

fDate

25-27 May 2008

Firstpage

1228

Lastpage

1230

Abstract

Low-parasitic electrostatic discharge (ESD) protection is highly desirable for RF ICs. Silicon controlled rectifier (SCR), which is usually used as an on-chip electrostatic discharge (ESD) protection device in ICs, has the advantages of high current shunting ability and low parasitic effect. In this paper, a new ESD protection device based on the dual-polarity SCR (DSCR) is proposed in 0.18-mum CMOS mixed-signal process. The structure, crucial parameters and performance optimization of this new DSCR device have been discussed, too. The new DSCR has a high ESD human body model (HBM) protection level, low parasitic effects and easily-adjustable crucial parameter.

Keywords

electrostatic discharge; radiofrequency integrated circuits; thyristors; CMOS mixed-signal process; ESD human body model; ESD protection device; RF IC ESD protection; dual-polarity SCR; low-parasitic electrostatic discharge; onchip electrostatic discharge; silicon controlled rectifier; Biological system modeling; CMOS process; Electrostatic discharge; Humans; Optimization; Protection; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2008. ICCCAS 2008. International Conference on

Conference_Location

Fujian

Print_ISBN

978-1-4244-2063-6

Electronic_ISBN

978-1-4244-2064-3

Type

conf

DOI

10.1109/ICCCAS.2008.4657989

Filename

4657989