Title :
A dual-polarity SCR for RF IC ESD protection
Author :
Liu, Jian ; Chen, Hongyi
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
Abstract :
Low-parasitic electrostatic discharge (ESD) protection is highly desirable for RF ICs. Silicon controlled rectifier (SCR), which is usually used as an on-chip electrostatic discharge (ESD) protection device in ICs, has the advantages of high current shunting ability and low parasitic effect. In this paper, a new ESD protection device based on the dual-polarity SCR (DSCR) is proposed in 0.18-mum CMOS mixed-signal process. The structure, crucial parameters and performance optimization of this new DSCR device have been discussed, too. The new DSCR has a high ESD human body model (HBM) protection level, low parasitic effects and easily-adjustable crucial parameter.
Keywords :
electrostatic discharge; radiofrequency integrated circuits; thyristors; CMOS mixed-signal process; ESD human body model; ESD protection device; RF IC ESD protection; dual-polarity SCR; low-parasitic electrostatic discharge; onchip electrostatic discharge; silicon controlled rectifier; Biological system modeling; CMOS process; Electrostatic discharge; Humans; Optimization; Protection; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Thyristors;
Conference_Titel :
Communications, Circuits and Systems, 2008. ICCCAS 2008. International Conference on
Conference_Location :
Fujian
Print_ISBN :
978-1-4244-2063-6
Electronic_ISBN :
978-1-4244-2064-3
DOI :
10.1109/ICCCAS.2008.4657989
