DocumentCode
3196242
Title
Inspection of through silicon vias (TSV) and other interconnections in IC packages by computed tomography
Author
Roth, Holger ; He, Zhenhui ; Mayer, Thomas
Author_Institution
Gen. Electr. Sensing & Inspection Technol. GmbH, Stuttgart, Germany
fYear
2010
fDate
13-16 Sept. 2010
Firstpage
1
Lastpage
4
Abstract
Through silicon vias (TSV) as used in 3D integrated electronic packages were inspected non-destructively by highly resolving nanofocus computed tomography (nanoCT). In particular, in the TSVs plating voids were visualised and quantitatively evaluated by numerical processing of the resulting volumetric data. The nanoCT technology is outlined and further applications such as interposers etc. are considered.
Keywords
computerised tomography; elemental semiconductors; integrated circuit interconnections; integrated circuit packaging; nondestructive testing; numerical analysis; silicon; 3D integrated electronic packages; IC packages; high resolution nanofocus computed tomography; interconnections; nondestructive inspection; numerical processing; through silicon vias; Computed tomography; Detectors; Electron tubes; Inspection; Three dimensional displays; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic System-Integration Technology Conference (ESTC), 2010 3rd
Conference_Location
Berlin
Print_ISBN
978-1-4244-8553-6
Electronic_ISBN
978-1-4244-8554-3
Type
conf
DOI
10.1109/ESTC.2010.5642807
Filename
5642807
Link To Document