Title :
Analysis of thermal characteristics of current gain for BJT-BSIT compound device
Author :
Zhang, Yourun ; Zhang, Bo ; Li, Zehong ; Lai, Changjin ; Li, Zhaoji
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
Analytical thermal characteristics of current gain for BJT-BSIT (bipolar junction transistor-bipolar static induction transistor) compound device in the low current operation is proposed. The author makes the thermal model and also obtains a best thermal compensating factor of the compound device that indicates the relationship between the thermal rating of current gain with device structure parameters. It is important for the better design of compound device. At last, the analytical model is found in good agreement with numerical simulation and experimental results. The test results demonstrate that the thermal rating of current gain is less than 10% in 25degC-85degC and 20% in -55deg-25degC.
Keywords :
bipolar transistors; numerical analysis; thermal analysis; BJT-BSIT compound device; bipolar junction transistor-bipolar static induction transistor; current gain; low current operation; numerical simulation; temperature -55 degC to -25 degC; temperature 25 degC to -85 degC; thermal characteristic analysis; thermal compensating factor; Analytical models; Equivalent circuits; Numerical simulation; Semiconductor process modeling; Temperature; Testing; Thermal factors; Thin film devices; Thin film transistors; Voltage;
Conference_Titel :
Communications, Circuits and Systems, 2008. ICCCAS 2008. International Conference on
Conference_Location :
Fujian
Print_ISBN :
978-1-4244-2063-6
Electronic_ISBN :
978-1-4244-2064-3
DOI :
10.1109/ICCCAS.2008.4658000
