Analysis of thermal characteristics of current gain for BJT-BSIT compound device

Author

Zhang, Yourun ; Zhang, Bo ; Li, Zehong ; Lai, Changjin ; Li, Zhaoji

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2008

fDate

25-27 May 2008

Firstpage

1278

Lastpage

1281

Abstract

Analytical thermal characteristics of current gain for BJT-BSIT (bipolar junction transistor-bipolar static induction transistor) compound device in the low current operation is proposed. The author makes the thermal model and also obtains a best thermal compensating factor of the compound device that indicates the relationship between the thermal rating of current gain with device structure parameters. It is important for the better design of compound device. At last, the analytical model is found in good agreement with numerical simulation and experimental results. The test results demonstrate that the thermal rating of current gain is less than 10% in 25degC-85degC and 20% in -55deg-25degC.

Keywords

bipolar transistors; numerical analysis; thermal analysis; BJT-BSIT compound device; bipolar junction transistor-bipolar static induction transistor; current gain; low current operation; numerical simulation; temperature -55 degC to -25 degC; temperature 25 degC to -85 degC; thermal characteristic analysis; thermal compensating factor; Analytical models; Equivalent circuits; Numerical simulation; Semiconductor process modeling; Temperature; Testing; Thermal factors; Thin film devices; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2008. ICCCAS 2008. International Conference on

Conference_Location

Fujian

Print_ISBN

978-1-4244-2063-6

Electronic_ISBN

978-1-4244-2064-3

Type

conf

DOI

10.1109/ICCCAS.2008.4658000

Filename

4658000