A new membrane SOI power device

A new SOI high-voltage power device with a combination of Uniform and Variation in Lateral Doping profiles on Partial Membrane(UVLD PM SOI) is proposed. Its partial substrate under the drift region is etched to release the potential lines below the buried layer, combining uniform and variation in lateral doping profiles, resulting in an enhancement of breakdown voltage while achieving a low specific on-resistance. The simulation results indicate that breakdown voltage for UVLD PM SOI is twice as high as that of the conventional SOI with th a 3 mum thick buried oxide and 20 mum long drift region. In contrast to CamSem device, the maximal temperature decreases by 42 K and specific on-resistance greatly reduces for UVLD PM SOI with Lb=10 mum.