Analysis of high speed heterostructure devices

We present a review of industrial heterostructure devices based on SiGe/Si and III-V compound semiconductors analyzed by means of numerical simulation. The work includes a comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic analyses of Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs) with Minimos-NT are presented in good agreement with measured data. The examples are chosen to demonstrate technologically relevant issues which can be addressed by device simulation.