• DocumentCode
    3196432
  • Title

    Photovoltaic Device Operation at Low Temperature

  • Author

    Ekins-Daukes, N.J. ; Guenette, M.

  • Author_Institution
    Sch. of Phys., Sydney Univ., NSW
  • Volume
    1
  • fYear
    2006
  • fDate
    38838
  • Firstpage
    146
  • Lastpage
    149
  • Abstract
    The fundamental efficiency of a photovoltaic device is ultimately constrained by the temperature difference between the sun and the PV device. An ideal "Shockley-Queisser" single junction solar cell shows both a rise in limiting efficiency and reduction in optimum band-gap energy as the cell temperature is reduced. In the case of a solar cell that is dominated by parasitic non-radiative recombination at room temperature, an improvement in efficiency is shown when, at low temperature, radiative recombination dominates over all non-radiative modes. This "low temperature, radiatively limited" regime is not suitable for photovoltaic power generation, but is proposed as a useful regime for demonstrating demanding 3rd Generation photovoltaic device concepts that are otherwise too ambitious to function efficiently at room temperature
  • Keywords
    energy gap; photovoltaic power systems; solar cells; Shockley-Queisser single junction solar cell; band-gap energy; parasitic nonradiative recombination; photovoltaic device; photovoltaic power generation; Electric breakdown; Gallium arsenide; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Solar power generation; Spontaneous emission; Sun; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    1-4244-0017-1
  • Electronic_ISBN
    1-4244-0017-1
  • Type

    conf

  • DOI
    10.1109/WCPEC.2006.279385
  • Filename
    4059583