DocumentCode :
3196432
Title :
Photovoltaic Device Operation at Low Temperature
Author :
Ekins-Daukes, N.J. ; Guenette, M.
Author_Institution :
Sch. of Phys., Sydney Univ., NSW
Volume :
1
fYear :
2006
fDate :
38838
Firstpage :
146
Lastpage :
149
Abstract :
The fundamental efficiency of a photovoltaic device is ultimately constrained by the temperature difference between the sun and the PV device. An ideal "Shockley-Queisser" single junction solar cell shows both a rise in limiting efficiency and reduction in optimum band-gap energy as the cell temperature is reduced. In the case of a solar cell that is dominated by parasitic non-radiative recombination at room temperature, an improvement in efficiency is shown when, at low temperature, radiative recombination dominates over all non-radiative modes. This "low temperature, radiatively limited" regime is not suitable for photovoltaic power generation, but is proposed as a useful regime for demonstrating demanding 3rd Generation photovoltaic device concepts that are otherwise too ambitious to function efficiently at room temperature
Keywords :
energy gap; photovoltaic power systems; solar cells; Shockley-Queisser single junction solar cell; band-gap energy; parasitic nonradiative recombination; photovoltaic device; photovoltaic power generation; Electric breakdown; Gallium arsenide; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Solar power generation; Spontaneous emission; Sun; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279385
Filename :
4059583
Link To Document :
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