DocumentCode :
3196438
Title :
Thin film SOI and SOS LDMOS structures with Linear Doping Profile and enlarged field plate
Author :
Roig, J. ; Flores, D. ; Cortès, I. ; Hidalgo, S. ; Millán, J.
Author_Institution :
Power Devices & Syst. Group, CNM-CSIC, Barcelona, Spain
Volume :
1
fYear :
2004
fDate :
16-19 May 2004
Firstpage :
141
Abstract :
A new SOS (Silicon-On-Sapphire) LDMOS structure with Linear Doping Profile (LDP), or Variation on Lateral Doping (VLD) in the drift region, suitable for high voltage applications (> 600V) is proposed, analysed and compared with their SOI counterparts in this paper. An Extended Field Plate (EFP) including a step oxide is used to achieve a mirrored SOI-like structure which provides a vertical depletion of the drift region from the field oxide side. The electrical and thermal performances of the proposed structure have been obtained from technological and electro-thermal simulations. Although the subthreshold characteristics of the EFP-SOS LDMOS structure are similar than those of the EFP and FP-SOI counterparts, since the gate region parameters are identical, the blocking voltage and the conduction current capabilities are enhanced. In spite of the lower optimal Nd value used in EFP-SOS LDMOS transistors, their current capability is higher than that of the EFP-SOI ones due to the significant improvement of the generated heat extraction process.
Keywords :
MOSFET; electric breakdown; elemental semiconductors; power semiconductor devices; sapphire; semiconductor device breakdown; semiconductor device reliability; semiconductor doping; silicon-on-insulator; Linear Doping Profile; SOS LDMOS structures; Variation on Lateral Doping; blocking voltage; conduction current capabilities; drift region; enlarged field plate; field oxide side; gate region parameters; generated heat extraction process; high voltage applications; silicon-on-sapphire; step oxide; subthreshold characteristics; thin film SOI; vertical depletion; Degradation; Doping profiles; Impact ionization; Neodymium; Shape; Thin film transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
Type :
conf
DOI :
10.1109/ICMEL.2004.1314574
Filename :
1314574
Link To Document :
بازگشت