Title :
The influence of bulk parameters on the switching behavior of FWDs for traction application
Author :
Felsl, H.P. ; Falck, E. ; Pfaffenlehner, M. ; Lutz, J.
Author_Institution :
Chemnitz Univ. of Technol., Germany
Abstract :
We investigate the performance of free wheeling diodes (FWDs) for traction application. Since there is experimental evidence of well designed junction termination, we concentrate on bulk effects. By numerical simulation the influence of bulk doping and base width on the dynamic characteristics of FWDs is analyzed. As limiting criterium for snap-off behavior the reach-through of the space-charge region to the nn+-emitter region is found. Measurements are in good agreement with the simulations.
Keywords :
insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; semiconductor device reliability; semiconductor doping; space charge; base width; bulk doping; bulk effects; bulk parameters; dynamic characteristics; free wheeling diodes; junction termination; snap-off behavior; space-charge region; switching behavior; traction application; Analytical models; Circuit analysis; Circuit simulation; Diodes; Doping; Insulated gate bipolar transistors; Switches; Switching circuits; Transient analysis; Voltage;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314577
