Title :
Multi-Junction Solar Cell Spectral Tuning with Quantum Dots
Author :
Raffaelle, Ryne P. ; Sinharoy, Samar ; Andersen, John ; Wilt, David M. ; Bailey, Sheila G.
Author_Institution :
Rochester Inst. of Technol., NY
Abstract :
We have theoretically analyzed the potential efficiency improvement to multi-junction solar cell efficiencies which are available through the incorporation of quantum dot using detailed balance calculations. We have also experimentally investigated the Stranski-Krastanov growth of self-organized InAs quantum dots and quantum dot arrays on lattice-matched GaAs by metallorganic vapor phase epitaxy (MOVPE). The morphology of the quantum dots were investigated as a function of their growth parameters by atomic force microscopy (AFM). Photoluminescence and optical absorption measurements have demonstrated that the incorporation of InAs quantum dots (QD) into a GaAs structure can provide sub-GaAs bandgap electronic states
Keywords :
III-V semiconductors; MOCVD; atomic force microscopy; energy gap; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; solar cells; vapour phase epitaxial growth; AFM; GaAs; InAs; MOVPE; Stranski-Krastanov growth; atomic force microscopy; bandgap electronic states; metallorganic vapor phase epitaxy; morphology; multijunction solar cell; optical absorption; photoluminescence; potential efficiency; quantum dot arrays; self-organized quantum dots; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Gallium arsenide; Morphology; Phased arrays; Photovoltaic cells; Quantum dots; Quantum mechanics;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279407
