Performance study of a subclass Class E power amplifier in comparison with the typical one

In this paper, a new topology of the load network is introduced in the Class E power amplifier. The simple analysis and numeric results show that some improvements on output power, maximum utilizing frequency and device stress can be obtained by the new design method. Some simulations and experimental tests of this subclass are carried in contrast to the typical one. The design example uses an LDMOS transistor, MRF21010. The proposed amplifierpsilas drain efficiency is 85.6% and output power is 33 dBm at 200 MHz. The results validate the feasibility and improvements of the proposed subclass.