Analysis of Figure Of Merit - power transistor´s qualitative parameter

In order to meet upcoming regulations and standards for dc-dc converter´s efficiency, the analysis of qualitative indicator of power transistor was investigated. FOM - figure of merit, represents a measure of semiconductor suitability for high frequency power transistor application. This article deals with the analysis of FOM of several power MOSFETs, whereby main parameters are taken into consideration for calculation purposes. In order to verify faithfulness of FOM, the parametrical simulation analysis of hard-switching commutation mode for given parameters of target application (front-end converters) has been done. After it the switching losses together with conduction losses were determined, and consequently comparisons between the amount of transistor´s losses and its FOM indicator are provided.