Title :
Low resistance contact to CdTe thin films
Author :
Florez, M. ; de la Cruz, W. ; Teheran, P. ; Cota, L. ; Gordillo, G.
Author_Institution :
Dept. de Fisica, Univ. Nacional de Colombia, Bogota, Colombia
Abstract :
A new procedure to realize low resistance contact to polycrystalline CdTe thin films for solar cells deposited by CSS method is presented. Initially, the CdTe samples are etched with an oxidant agent in order to form a Te-rich surface layer; subsequently the CdTe samples are dipped in a CuCl solution to form a p+-Cux Te (1⩽x⩽2) layer through an ion-exchange chemical reaction; finally, the samples were contacted with Cu and Cu/Au deposited by thermal evaporation and C:Cu deposited by DC magnetron sputtering. Contact resistivities of 0.16 Ωcm2 were obtained using sulphochromic solution as oxidant agent and Cu as electrical contact. The changes induced in the CdTe-surface by the different surface treatments were studied by means of XRD and AES measurements
Keywords :
Auger effect; II-VI semiconductors; X-ray diffraction; cadmium compounds; carbon; contact resistance; copper; copper alloys; electrical contacts; electron spectroscopy; semiconductor device metallisation; semiconductor thin films; solar cells; sputtered coatings; vapour deposited coatings; AES measurements; C:Cu; CdTe; CdTe thin films; Cu; Cu contact; Cu-Au; Cu/Au contact; CuCl solution; DC magnetron sputtering; Te-rich surface layer; XRD measurements; close space sublimation; contact resistivities; etching; ion-exchange chemical reaction; low resistance contact; oxidant agent; polycrystalline CdTe thin films; solar cells; sulphochromic solution; surface treatments; thermal evaporation; Cascading style sheets; Chemicals; Contact resistance; Etching; Gold; Photovoltaic cells; Sputtering; Surface resistance; Tellurium; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564283
