A five-level time-domain model for quantum dot lasers: influence of carrier capture and escape processes on dynamic and static characteristic

Author

Lysak, V.V. ; Shulika, A.V. ; Sukhoivanov, I.A.

Author_Institution

Kharkov State Tech. Univ. of Radio Electron., Ukraine

fYear

2001

fDate

2001

Firstpage

64

Lastpage

68

Abstract

The model is offered on the basis of the transmission line approach, which allows making researches of dynamic behavior of the quantum dot lasers. The character of the influence of a carrier captures and escapes processes on modulation and current-watt performances are researched numerically. The simulation results indicate, that the greatest influence on the laser performances have the carrier capture processes in quantum dots, and carrier capture from optical confinement layer into the wetting layer. The calculated results have good agreement with experimental data

Keywords

carrier mobility; electro-optical modulation; quantum well lasers; semiconductor device models; semiconductor quantum dots; InGaAs-GaAs; carrier capture; carrier capture processes; carrier escape processes; dynamic behavior; dynamic characteristic; five-level time-domain model; laser performances; optical confinement layer; quantum dot lasers; static characteristic; transmission line approac; wetting layer; Carrier confinement; Electron optics; Laser modes; Optical arrays; Optical saturation; Quantum dot lasers; Semiconductor lasers; Time domain analysis; Transmission lines; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling, 2001. Proceedings of LFNM 2001. 3rd International Workshop on

Conference_Location

Kharkiv

Print_ISBN

0-7803-6680-8

Type

conf

DOI

10.1109/LFNM.2001.930206

Filename

930206