Title :
Carbon doping effects on hot electron trapping
Author :
Haddad, H. ; Forbes, L. ; Burke, P. ; Richling, W.
Author_Institution :
Hewlett-Packard, Corvallis, OR, USA
Abstract :
The injection of hot electrons in submicrometer MOS devices constitutes a serious limitation on the application and reliability of these devices. It is shown that carbon doping can significantly reduce or delay this ageing process and the shifts of threshold voltages of MOS transistors with time. Carbon doping has been achieved by both using carbon-doped substrates and by ion implantation of carbon.<>
Keywords :
ageing; carbon; elemental semiconductors; hot carriers; insulated gate field effect transistors; reliability; semiconductor doping; silicon; MOS transistors; Si:C; ageing process; hot electron trapping; injection of hot electrons; ion implantation; limitation; reliability; shifts of threshold voltages; submicrometer MOS devices; Aging; Circuit faults; Doping; Electron traps; Hot carriers; MOS devices; Silicon; Stacking; Temperature; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66102
