Electrodeposition of mercury zinc telluride thin films for solar cell applications

Author

Thero, Christine ; Singh, Pritpal

fYear

1996

fDate

13-17 May 1996

Firstpage

941

Lastpage

943

Abstract

The authors report the first electrodeposition of mercury zinc telluride (Hg_xZn_1-xTe) thin films. Using a galvanic approach, the authors have deposited films of composition varying between x=0 to x=0.4 on indium tin oxide (ITO)/glass substrates. The films were found to be smooth, uniform and adherent with a small grain size (0.1-0.9 μm), polycrystalline structure. X-ray diffraction analysis of the films indicated a shift in the (111) peak with alloying in good agreement with a Vegard´s law behavior. The optical absorption edge was found to be a soft, direct band edge with optical absorption coefficients of the order 10⁴ cm^-1

Keywords

electrodeposition; electrodeposits; grain size; mercury compounds; optical constants; semiconductor device models; semiconductor device testing; semiconductor thin films; solar cells; substrates; zinc compounds; (111) peak; 0.1 to 0.9 mum; Hg_xZn_1-xTe thin-film solar cells; HgZnTe; electrodeposition; galvanic approach; optical absorption coefficients; optical absorption edge; polycrystalline structure; ray diffraction analysis; small grain size; substrates; Electromagnetic wave absorption; Galvanizing; Glass; Grain size; Indium tin oxide; Mercury (metals); Optical films; Tellurium; Transistors; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564284

Filename

564284