Control of transmission in photonic structures with n-i-p-i layers

Author

Kononenko, V.K. ; Ushakov, D.V. ; Nefedov, I.S. ; Gusyatnikov, V.N. ; Morozov, Yu A.

Author_Institution

Stepanov Inst. of Phys, Acad. of Sci., Minsk, Byelorussia

fYear

2001

fDate

2001

Firstpage

97

Lastpage

99

Abstract

Structures with a tunable photonic band gap can be used as effective optical switches. In this paper, the availability of n-i-p-i crystal layers in such periodic structures is considered. The dispersion and transmission characteristics of the GaAs-AlGaAs structures are examined for different excitation levels up to where light amplification occurs, The main feature of the switches is the control of the photonic band gap edge near 1.5 μm by light at the shorter wavelengths due to the change in the refraction index of the active layers

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical dispersion; optical switches; photonic band gap; refractive index; 1.5 mum; GaAs-AlGaAs structure; active layers; dispersion characteristics; light amplification; n-i-p-i crystal layers; n-i-p-i layer; optical switches; photonic band gap edge; photonic structures; refraction index; transmission characteristics; tunable photonic band gap; Absorption; Extinction coefficients; Nonlinear optics; Optical control; Optical refraction; Photonic band gap; Radiative recombination; Semiconductor superlattices; Spontaneous emission; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling, 2001. Proceedings of LFNM 2001. 3rd International Workshop on

Conference_Location

Kharkiv

Print_ISBN

0-7803-6680-8

Type

conf

DOI

10.1109/LFNM.2001.930216

Filename

930216