Title :
Epitaxial Gd3(GaSc)5O12:Er and CN:Er films in active medium for 1.5-μm laser
Author :
Prudnikov, A.M. ; Tsymbal, L.T. ; Varyukhin, V.N. ; Linnik, A.I. ; Shalaev, R.V.
Author_Institution :
Physicotech. Inst., Acad. of Sci., Donetsk, Ukraine
Abstract :
Summary form only given. The studied Gd3(Ga2Sc)5O12:Er films were grown using the method of liquid-phase epitaxy on pure Gd3Ga 5O12 substrates. The employed films, which differed in the number of Gd3+ ions, are replaced by Er3+ ions. The Sc3+ ions were used to compensate the size of the elementary crystal cell of the film and to bring the size of the elementary cell in correspondence with the size of the substrate. An influence in studied of electromagnetic radiation on epitaxial structure growing processes. High power xenon lamp, pulse and continuous lasers were used in experiments on CN:Er films growing. The model of processes on the crystallization surface is considered and the necessity to take defects kinetics into account when analyzing photostimulated epitaxy is shown. Spectral-luminescent properties of Gd 3(GaSc)5O12 and CN films doped with Er 3+ ions have been studied
Keywords :
erbium; gadolinium compounds; laser transitions; liquid phase epitaxial growth; optical films; photoluminescence; solid lasers; stimulated emission; 1.5-μm laser; CN:Er; CN:Er films; Gd3(Ga2Sc)5O12:Er; Gd3Ga5O12; Sc3+ ions; active medium; continuous lasers; electromagnetic radiation; elementary crystal cell; epitaxial Gd3(GaSc)5O12:Er films; epitaxial structure growing processes; high power xenon lamp; liquid-phase epitaxy; photostimulated epitaxy; pulse lasers; spectral-luminescent properties; Electromagnetic radiation; Epitaxial growth; Erbium; Gas lasers; Lamps; Laser modes; Optical pulses; Power lasers; Substrates; Xenon;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2001. Proceedings of LFNM 2001. 3rd International Workshop on
Conference_Location :
Kharkiv
Print_ISBN :
0-7803-6680-8
DOI :
10.1109/LFNM.2001.930222
