DocumentCode :
3197063
Title :
Simulation of YAG:Nd microchip laser with epitaxial YAG:Cr4+ Q-switching layer
Author :
Buryy, O.A. ; Ubiszkii, S.B. ; Melnyk, S.S. ; Matkovskii, A.O.
Author_Institution :
Nat. Univ. Lviv Politech., Ukraine
fYear :
2001
fDate :
2001
Firstpage :
126
Lastpage :
129
Abstract :
The microchip Nd:YAG laser Q-switched by the epitaxial film of the Cr4+:YAG saturable absorber is considered. The optimal values of the absorber initial transmission and the output mirror reflectivity are being optimized in order to reach the maximum of the energy at the laser pulse
Keywords :
Q-switching; epitaxial layers; laser mirrors; neodymium; optical saturable absorption; reflectivity; solid lasers; Cr4+:YAG saturable absorber; YAG:Cr; YAG:Nd; YAG:Nd microchip laser simulation; YAl5O12:Cr; YAl5O12:Nd; absorber initial transmission; epitaxial YAG:Cr4+ Q-switching layer; epitaxial film; laser pulse energy maximum; microchip Nd:YAG laser; optimal val; output mirror reflectivity; Laser excitation; Laser modes; Laser transitions; Microchip lasers; Mirrors; Optical films; Optical pulse generation; Optical pulses; Pump lasers; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2001. Proceedings of LFNM 2001. 3rd International Workshop on
Conference_Location :
Kharkiv
Print_ISBN :
0-7803-6680-8
Type :
conf
DOI :
10.1109/LFNM.2001.930227
Filename :
930227
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3197063
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