DocumentCode
3197150
Title
Noise and small-signal distributed model of millimeter-wave FETs
Author
Escotte, L. ; Mollier, J.C. ; Lecreff, M.
Author_Institution
IRCOM, Limoges, France
fYear
1988
fDate
25-27 May 1988
Firstpage
919
Abstract
A distributed FET model is presented for millimeter-wave frequencies and experimental S-parameters are compared with distributed and lumped model values. Termed the sliced model, this distributed circuit model predicts S-parameters and four noise parameters up to frequency of 40 GHz from microwave noise figure measurements. An example is given that shows good agreement between theoretical data and S-parameters and noise figure measurements up to 26 GHz.<>
Keywords
S-parameters; electron device noise; field effect transistors; semiconductor device models; solid-state microwave devices; S-parameters; microwave noise figure measurements; millimeter-wave FETs; noise parameters; sliced model; small-signal distributed model; solid state microwave devices; Circuit noise; Frequency; Microwave FETs; Microwave circuits; Microwave measurements; Millimeter wave circuits; Millimeter wave measurements; Noise figure; Noise measurement; Predictive models;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MWSYM.1988.22181
Filename
22181
Link To Document