Photoresponse Characteristics of Nitrogen Doped Carbon /P-Silicon Photovoltaic Cell

Carbon films are deposited by pulsed laser deposition technique in nitrogen (N) environment. Camphor, a natural source is used as a starting precursor for the carbonaceous film. The optoelectronic properties indicate successful doping for the film deposited at low nitrogen content. Photovoltaic characteristics of N incorporated carbon on silicon structure is investigated. The J-V characteristic of N-incorporated carbon (N-C)/p-silicon photovoltaic cell under illumination is observed to improve upon N-incorporation in carbon layer. The photoresponse characteristic is observed to depend strongly on N content of the carbon layer. Gradual spectral shift of the peak with N reveal the structural modifications of the carbon layer due to the incorporation of N