MOSFET models at the edge of 100-nm sizes

The paper reviews the mainstream MOSFET advanced models with their physical relevance and mathematical techniques. The basics of the respective modeling approaches are discussed showing the principle advantages of the surface potential based approach for describing sub-100-nm devices. Major short-channel and quantum effects in the models are outlined. Emphasis is set upon the latest compact models: BSIM3/4, MOS Models 9/11, EKV, SP2001. Selected characteristics (such as inversion model basis, core reference, drain current and threshold. voltage equations, short-channel and quantum effects, number of model parameters) of the models examined are compared as well as comments on model virtues and shortcomings are given.