InGaAs pseudomorphic HEMTs for millimeter wave power applications

Author

Smith, P.M. ; Chao, P.C. ; Lester, L.F. ; Smith, R.P. ; Lee, B.R. ; Ferguson, D.W. ; Jabra, A.A. ; Ballingall, J.M. ; Duh, K.H.G.

Author_Institution

Gen. Electr. Co., Syracuse, NY, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

927

Abstract

The development of InGaAs pseudomorphic high-electron mobility transistors (HEMTs) with state-of-the-art power performance at millimeter-wave frequencies is reported. Results given include maximum power-added efficiencies of 44% at 35 GHz and 36% at 44 GHz, output power of 100 mW with 22% efficiency and 3-dB gain at 60 GHz, and output power of 9 mW at 94 GHz. Preliminary reliability data are presented, and prospects for further improvement in performance-the realization of multifinger HEMTs capable of higher output power and reduction of gate length to 0.1 mu m-are discussed.<>

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 0.1 micron; 22 to 44 percent; 3 dB; 35 to 94 GHz; 9 to 100 mW; EHF; III-V semiconductors; InGaAs; MM-wave device; gate length; high-electron mobility transistors; microwave power transistor; millimeter wave power applications; multifinger HEMTs; pseudomorphic HEMTs; reliability data; Doping; Frequency; Gallium arsenide; HEMTs; Heterojunctions; Indium gallium arsenide; MODFETs; Millimeter wave transistors; PHEMTs; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22183

Filename

22183