Title :
MoSe2 Formation from Selenization of Mo and Nanoparticle Derived Cu(In,Ga)Se2/Mo Films
Author :
Ahn, Sejin ; Kim, KiHyun ; Yoon, Kyunghoon
Author_Institution :
Korea Inst. of Energy Res., Daejeon
Abstract :
The formation characteristics of MoSe2 by selenization of Mo and nanoparticle derived Cu(ln,Ga)Se2(CIGS)/Mo layers were investigated with a two-zone RTP (rapid thermal process) furnace to elucidate why the CIGS/Mo layer peels off the glass substrate when selenized under the high Se vapor pressure condition. It was found that the thickness of MoSe2 linearly increased with Se evaporation temperature and substrate temperature. At a substrate temperature of 550degC and Se evaporation temperature of 450degC, 1.6mum thick MoSe2 layer formed in 5 minutes with an expense of 0.4mum thick Mo. The formation of very thick MoSe2 layer revealed that c-axis of hexagonal MoSe2 is parallel to the Mo substrate. When the nanoparticle derived CIGS/Mo layers are selenized at a substrate temperature of 500degC and Se evaporation temperature of 450degC for 5 minutes, about 1.3mum thick MoSe2 formed at CIGS and Mo interface without significant growth of CIGS particles, demonstrating that reaction rate of Se with Mo is much faster than that with CIGS nanoparticles
Keywords :
copper compounds; gallium compounds; heat treatment; indium compounds; molybdenum; molybdenum compounds; nanoparticles; nanotechnology; semiconductor thin films; ternary semiconductors; 0.4 micron; 1.6 micron; 450 C; 5 min; 500 C; 550 C; CIGS-molybdenum layers; Cu(InGa)Se2-MoSe2-Mo; Mo; Na2O-CaO-SiO2; molybdenum substrate; nanoparticle; reaction rate; selenium evaporation temperature; selenization; semiconductor thin films; soda lime glass substrate; substrate temperature; two-zone rapid thermal process; Adhesives; Costs; Furnaces; Glass; Heat treatment; Nanoparticles; Rapid thermal processing; Spraying; Substrates; Temperature control;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279502
