DocumentCode
3198463
Title
Impact of STI stress on hot carrier degradation in 5V NMOSFET
Author
Jiang, Hao ; Yap, Hin Kiong ; Pandey, Shesh Mani ; Park, Jae Soo ; Lim, James ; Zeng, Xu
Author_Institution
QRA/Reliability Dept., Global Foundries Singapore Pte Ltd., Singapore, Singapore
fYear
2011
fDate
16-20 Oct. 2011
Firstpage
94
Lastpage
97
Abstract
The effects of shallow trench isolation (STI) induced mechanical stress on hot carrier degradation of 5V NMOSFET with different source(S)/drain(D) areas are studied. It is found that increased compressive STI stress with S/D area reduction can enhance the drain side impact ionization rate due to band gap narrowing effect which results in more hot carrier generation. TCAD simulations are also performed to explain the hot carrier degradation dependence on STI stress.
Keywords
MOSFET; hot carriers; NMOSFET; S-D area reduction; STI stress; TCAD simulations; band gap narrowing effect; compressive STI stress; drain side impact ionization rate; hot carrier degradation; mechanical stress; shallow trench isolation; voltage 5 V; Degradation; Hot carriers; Impact ionization; Logic gates; Photonic band gap; Stress; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4577-0113-9
Type
conf
DOI
10.1109/IIRW.2011.6142597
Filename
6142597
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