Title :
Impact of STI stress on hot carrier degradation in 5V NMOSFET
Author :
Jiang, Hao ; Yap, Hin Kiong ; Pandey, Shesh Mani ; Park, Jae Soo ; Lim, James ; Zeng, Xu
Author_Institution :
QRA/Reliability Dept., Global Foundries Singapore Pte Ltd., Singapore, Singapore
Abstract :
The effects of shallow trench isolation (STI) induced mechanical stress on hot carrier degradation of 5V NMOSFET with different source(S)/drain(D) areas are studied. It is found that increased compressive STI stress with S/D area reduction can enhance the drain side impact ionization rate due to band gap narrowing effect which results in more hot carrier generation. TCAD simulations are also performed to explain the hot carrier degradation dependence on STI stress.
Keywords :
MOSFET; hot carriers; NMOSFET; S-D area reduction; STI stress; TCAD simulations; band gap narrowing effect; compressive STI stress; drain side impact ionization rate; hot carrier degradation; mechanical stress; shallow trench isolation; voltage 5 V; Degradation; Hot carriers; Impact ionization; Logic gates; Photonic band gap; Stress; Transistors;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4577-0113-9
DOI :
10.1109/IIRW.2011.6142597
