Title :
A new degradation mechanism of gate oxide reliability due to "extrinsic" responses of Qbd along rough "bird´s-beak" frontline
Author :
Sheng, Lieyi ; Gerlach, Jeff ; Glines, Eddie
Author_Institution :
ON Semicond., Pocatello, ID, USA
Abstract :
The roughness of "bird\´s-beak" frontline prior to gate oxidation has been revealed for the first time to degrade gate oxide reliability in TDDB. This new mechanism identifies the "extrinsic" Qbd responses to electrical fields. The restorations of intrinsic Qbd have been realized by post-fabrication anneals or process improvement.
Keywords :
CMOS integrated circuits; integrated circuit reliability; CMOS process; TDDB; bird-beak frontline; degradation mechanism; electrical fields; extrinsic responses; gate oxide reliability; post-fabrication anneals; process improvement; Annealing; Correlation; Degradation; Electric breakdown; Logic gates; Oxidation; Reliability; "bird´s-beak"; Gate oxide reliability; degradation mechanism; fontline roughness; intrinsic and "extrinsic" Qbd;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4577-0113-9
DOI :
10.1109/IIRW.2011.6142598
