Title :
Admittance Spectroscopy Characterization of Deep Electronic States in Cadmium Telluride Solar Cells
Author :
Seymour, Fred H. ; Kaydanov, Victor ; Ohno, Tim R.
Author_Institution :
Colorado Sch. of Mines, Golden, CO
Abstract :
Deep electronic states (DES) in the absorber layer of polycrystalline thin film CdTe solar cells are believed to limit their energy conversion efficiency. These DES can cause Shockley-Read-Hall recombination that degrades performance, but they can also enhance performance by contributing to the space charge density in the depletion region. Admittance spectroscopy has been applied to detect and characterize several DES on CdTe solar cells obtained from multiple sources that had post-deposition treatments with and without Cu and CdCl 2. Current density voltage data taken over a range of temperatures suggests that the cadmium vacancy and related chlorine complex defect might play a role in the improved Jsc observed with CdCl2 treated cells. Selected aspects of the relationships between these DES, cell processing, and cell performance are discussed
Keywords :
Hall effect; II-VI semiconductors; cadmium compounds; electric admittance; semiconductor thin films; solar cells; space charge; CdTe; DES; Shockley-Read-Hall recombination; absorber layer; admittance spectroscopy; cadmium telluride solar cells; cadmium vacancy; chlorine complex defect; current density; deep electronic states; energy conversion efficiency; polycrystalline thin film; post-deposition treatments; space charge density; Admittance; Cadmium compounds; Current density; Degradation; Energy conversion; Photovoltaic cells; Space charge; Spectroscopy; Spontaneous emission; Transistors;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279511