DocumentCode :
3198587
Title :
Impact of gate length and gate oxide thickness on the relationship of FN-stress induced degradation parameters
Author :
Kang, Y.H. ; Lee, C.W. ; Kim, H.U. ; Ryu, Y.K. ; Kim, H.S. ; Jung, T.S.
Author_Institution :
Memory Div., Samsung Electron., Hwasung, South Korea
fYear :
2011
fDate :
16-20 Oct. 2011
Firstpage :
115
Lastpage :
116
Abstract :
The Fowler-Nordheim (FN) stress on PMOSFET cause Idsat decrease and Vth increase. In this work, we have investigated FN stress induced device degradation mechanisms in PMOSFETs with different gate length and oxide thickness. We describe a quantitative relationship between Idsat, Idlin and Vth change under FN stress condition.
Keywords :
MOSFET; semiconductor device reliability; FN-stress-induced degradation parameters; Fowler-Nordheim stress; PMOSFET; gate length; gate oxide thickness; Degradation; Electric fields; Logic gates; MOSFET circuits; MOSFETs; Stress; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4577-0113-9
Type :
conf
DOI :
10.1109/IIRW.2011.6142603
Filename :
6142603
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3198587
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