Anodic bonding at low voltage using microstructured borosilicate glass thin-films

Author

Leib, Juergen ; Hansen, Ulli ; Maus, Simon ; Feindt, Holger ; Hauck, Karin ; Zoschke, Kai ; Toepper, Michael

Author_Institution

MSG Lithoglas AG, Berlin, Germany

fYear

2010

fDate

13-16 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

The use of borosilicate glass for anodic wafer bonding to silicon is well established in industry. In this paper we present a matured approach, where a microstructured borosilicate glass thin-film instead of a bulk glass wafer is used as anodic bond layer. A glass layer with a thickness of 3-5 μm is sufficient for a stable bond at very moderate bond parameters with bond voltages in the range of 30-60 V at standard bond temperatures of around 300°C and below. This enables the use of anodic bonding also for sensitive devices.

Keywords

borosilicate glasses; dielectric thin films; elemental semiconductors; micromechanical devices; silicon; wafer bonding; B₂O₃-SiO₂; Si; anodic bond layer; anodic wafer bonding; bond parameters; bond voltages; microstructured borosilicate glass thin films; size 3 mum to 5 mum; voltage 30 V to 60 V; Adhesives; Films; Glass; Plasma temperature; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic System-Integration Technology Conference (ESTC), 2010 3rd

Conference_Location

Berlin

Print_ISBN

978-1-4244-8553-6

Electronic_ISBN

978-1-4244-8554-3

Type

conf

DOI

10.1109/ESTC.2010.5642923

Filename

5642923