• DocumentCode
    3198638
  • Title

    Challenges in scalable fault tolerance

  • Author

    Lincoln, Patrick

  • Author_Institution
    Comput. Sci. Lab., SRI Int., Menlo Park, CA, USA
  • fYear
    2009
  • fDate
    30-31 July 2009
  • Firstpage
    13
  • Lastpage
    14
  • Abstract
    The continued scaling of device dimensions is leading toward devices where only a handful of dopant atoms or charges can make the difference between a one and a zero in the of state of represented bit, by enhancing or depleting channel conduction. Thus very minor static imperfections in dopant distribution, dielectric properties, or device geometry, and dynamic conditions associated with heat, radiation, or aging can perturb a device out of specification and cause electrical errors. Thus we might expect to soon see devices with millions of static defects and thousands of soft errors in very short time periods. Both static defects and dynamic faults at these scales present huge challenges. Classical methods for fault or defect tolerance at a higher level of architecture (eg. N-modular-redundancy) can be impractically expensive, and some approaches to diagnosis and reconfiguration require immense reliable memories or impractical test and reconfiguration times. Efficient and effective means are needed that exploit structure inherent in one layer of architecture to provide key properties to enable reliable execution at other levels.
  • Keywords
    fault tolerance; nanotechnology; channel conduction; device dimensions; device geometry; dielectric property; dopant atoms; dopant distribution; electrical errors; scalable fault tolerance; static defect; static imperfection; Application software; Automatic control; Automation; Computer aided instruction; Computer science; Computer science education; Educational technology; Fault tolerance; Instruments; Military computing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscale Architectures, 2009. NANOARCH '09. IEEE/ACM International Symposium on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-4244-4957-6
  • Electronic_ISBN
    978-1-4244-4958-3
  • Type

    conf

  • DOI
    10.1109/NANOARCH.2009.5226360
  • Filename
    5226360