DocumentCode :
3198638
Title :
Challenges in scalable fault tolerance
Author :
Lincoln, Patrick
Author_Institution :
Comput. Sci. Lab., SRI Int., Menlo Park, CA, USA
fYear :
2009
fDate :
30-31 July 2009
Firstpage :
13
Lastpage :
14
Abstract :
The continued scaling of device dimensions is leading toward devices where only a handful of dopant atoms or charges can make the difference between a one and a zero in the of state of represented bit, by enhancing or depleting channel conduction. Thus very minor static imperfections in dopant distribution, dielectric properties, or device geometry, and dynamic conditions associated with heat, radiation, or aging can perturb a device out of specification and cause electrical errors. Thus we might expect to soon see devices with millions of static defects and thousands of soft errors in very short time periods. Both static defects and dynamic faults at these scales present huge challenges. Classical methods for fault or defect tolerance at a higher level of architecture (eg. N-modular-redundancy) can be impractically expensive, and some approaches to diagnosis and reconfiguration require immense reliable memories or impractical test and reconfiguration times. Efficient and effective means are needed that exploit structure inherent in one layer of architecture to provide key properties to enable reliable execution at other levels.
Keywords :
fault tolerance; nanotechnology; channel conduction; device dimensions; device geometry; dielectric property; dopant atoms; dopant distribution; electrical errors; scalable fault tolerance; static defect; static imperfection; Application software; Automatic control; Automation; Computer aided instruction; Computer science; Computer science education; Educational technology; Fault tolerance; Instruments; Military computing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscale Architectures, 2009. NANOARCH '09. IEEE/ACM International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4957-6
Electronic_ISBN :
978-1-4244-4958-3
Type :
conf
DOI :
10.1109/NANOARCH.2009.5226360
Filename :
5226360
Link To Document :
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