Title :
Influence of the GA Content on the Mo/Cu(In,Ga)Se2 Interface Formation
Author :
Witte, Wolfram ; Kniese, Robert ; Eicke, Axel ; Powalla, Michael
Author_Institution :
Zentrum fur Sonnenenergie-und Wasserstoff-Forschung Baden-Wurttemberg, Stuttgart
Abstract :
Culn1-xGaxSe2 (CIGS) thin films with various Ga contents x were characterized by micro-Raman spectroscopy. All samples were investigated using the 532 nm line of a Nd:YAG laser in the back-scattering geometry. A linear increase of the frequency of the chalcopyrite A1 mode from 174 cm-1 to 184 cm-1 with increasing Ga content was observed. Special attention was directed to the interface between the CIGS absorber and the Mo back contact. Sputtered neutral mass spectroscopy (SNMS) and Raman line scans on cross-sections revealed a reduced formation of MoSe2 at the Mo/CIGS interface for higher Ga contents
Keywords :
Raman spectra; copper compounds; indium compounds; mass spectra; molybdenum; semiconductor thin films; semiconductor-metal boundaries; ternary semiconductors; 532 nm; Mo-CuIn1-xGaxSe2; Raman line scans; back-scattering geometry; chalcopyrite frequency; interface formation; micro-Raman spectra; sputtered neutral mass spectroscopy; thin films; Crystalline materials; Geometrical optics; Laser modes; Mass spectroscopy; Photonic band gap; Photovoltaic cells; Sputtering; Temperature measurement; Temperature sensors; Wavelength measurement;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279515
