DocumentCode :
3198672
Title :
Device optimization and modeling for resonant power conversion
Author :
Trivedi, Malay ; Shenai, Krishna
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
370
Abstract :
Resonant conversion offers dramatic reduction in switching stress, enabling an increase in switching frequency until the device once again becomes the limiting factor. However, estimates on the performance of the device in resonant converters do not adequately account for device-circuit interactions that strongly influence the switching losses. Additionally, lack of satisfactory and reliable circuit models for soft-switching performance of power devices hinders the design of optimum soft-switching converters. For these reasons, it is vital to understand device performance in soft-switching applications using physical analysis and optimize it for highest switching frequency. This paper presents a study of the performance of IGBT in a resonant DC link inverter and series resonant inverter, and compares their performance against the voltage source inverter. Due to the contribution of switching losses, it is necessary to develop circuit models that can reliably predict device transient performance
Keywords :
insulated gate bipolar transistors; invertors; losses; power semiconductor switches; resonant power convertors; switching circuits; IGBT performance; circuit models; device-circuit interactions; highest switching frequency; optimum soft-switching converters; resonant DC link inverter; resonant converters; resonant power conversion; series resonant inverter; soft-switching performance; switching frequency; switching losses; switching stress reduction; transient performance prediction; voltage source inverter; Circuits; Performance analysis; Performance loss; Power conversion; Resonance; Resonant inverters; Stress; Switching converters; Switching frequency; Switching loss;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, 2000. ISIE 2000. Proceedings of the 2000 IEEE International Symposium on
Conference_Location :
Cholula, Puebla
Print_ISBN :
0-7803-6606-9
Type :
conf
DOI :
10.1109/ISIE.2000.930325
Filename :
930325
Link To Document :
بازگشت