• DocumentCode
    3198685
  • Title

    Experimental characterization of the interactions between HCI, off-state and BTI degradation modes

  • Author

    Federspiel, X. ; Cacho, F. ; Roy, D.

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2011
  • fDate
    16-20 Oct. 2011
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    In this paper we will review experiments combining several types of FET device degradation modes, including HCI, off-state and BTI and analyze the potential interaction between degradation modes. We will compare experimental results to theoretical models, predicting degradation of devices in general AC stress or various mission profiles, covering a wide range of Vd/Vg polarization. The interaction effect will also be discussed to analyze the nature and localization of defects.
  • Keywords
    field effect transistors; AC stress; BTI degradation modes; FET device degradation modes; HCI; Degradation; Equations; Human computer interaction; Mathematical model; Stress; Stress measurement; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4577-0113-9
  • Type

    conf

  • DOI
    10.1109/IIRW.2011.6142608
  • Filename
    6142608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3198685