Title :
Experimental characterization of the interactions between HCI, off-state and BTI degradation modes
Author :
Federspiel, X. ; Cacho, F. ; Roy, D.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
In this paper we will review experiments combining several types of FET device degradation modes, including HCI, off-state and BTI and analyze the potential interaction between degradation modes. We will compare experimental results to theoretical models, predicting degradation of devices in general AC stress or various mission profiles, covering a wide range of Vd/Vg polarization. The interaction effect will also be discussed to analyze the nature and localization of defects.
Keywords :
field effect transistors; AC stress; BTI degradation modes; FET device degradation modes; HCI; Degradation; Equations; Human computer interaction; Mathematical model; Stress; Stress measurement; Time measurement;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4577-0113-9
DOI :
10.1109/IIRW.2011.6142608
