Title :
Investigation of nano-patterned PZT thin films by piezoresponse force microscopy
Author :
Waegner, M. ; Haußmann, A. ; Hoffmann, M. ; Suchaneck, G. ; Gerlach, G. ; Eng, L.M.
Author_Institution :
Solid State Electron. Lab., Tech. Univ. Dresden, Dresden, Germany
Abstract :
In this work, we describe an alternative lithography method for the fabrication of regular well-defined Pb(Zr,Ti)O3 (PZT) nanodot arrays and the investigation of the local polarization and hysteresis properties of nano-patterned ferroelectric films. PZT films were produced by multi-target sputtering and patterned by nanosphere lithography. Therefore, a monolayer of well-ordered latex beads was assembled in a hexagonally close-packed array on a liquid-gas interface and deposited onto the PZT films. Both mask and film were then etched in a two-step process. By the first step, the size of the spheres was adjusted by low-pressure plasma etching, while secondly the PZT film was structured by ion-milling. The resulting nanostructures were investigated by piezoresponse force microscopy (PFM). The in-plane and out-of-plane polarization distribution was imaged. A reorganisation of the ferroelectric domains was observed depending on the structure and nanodot size. In addition, local hysteresis loops of single structures and domains were recorded.
Keywords :
ferroelectric thin films; lead compounds; lithography; nanopatterning; oxygen compounds; piezoelectric thin films; sputter etching; zirconium compounds; PZT; hexagonally close-packed array; hysteresis properties; ion milling; latex beads; liquid-gas interface; local hysteresis loops; local polarization; low-pressure plasma etching; multitarget sputtering; nanopatterned ferroelectric films; nanopatterned thin films; nanosphere lithography; piezoresponse force microscopy; polarization distribution; regular well-defined nanodot arrays; Piezoelectric polarization;
Conference_Titel :
Electronic System-Integration Technology Conference (ESTC), 2010 3rd
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-8553-6
Electronic_ISBN :
978-1-4244-8554-3
DOI :
10.1109/ESTC.2010.5642928