Title :
Spin dependent charge pumping: A new tool for reliability studies
Author :
Bittel, B.C. ; Lenahan, P.M. ; Ryan, J.T. ; Fronheiser, J. ; Lelis, A.J.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
We have developed a new technique, spin dependent charge (SDCP) pumping which combines the unrivaled analytical power of EPR to identify the atomic scale nature of point defects with charge pumping, a widely used electrical characterization technique used to study interface/near interface defects in MOSFETs. We demonstrate SDCP to be a very powerful tool with potential to be of widespread use to the MOSFET reliability community.
Keywords :
MOSFET; charge pump circuits; semiconductor device reliability; EPR; MOSFET reliability community; SDCP; spin dependent charge pumping; Charge pumps; Logic gates; MOSFETs; Magnetic field measurement; Sensitivity; Silicon; Silicon carbide;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4577-0113-9
DOI :
10.1109/IIRW.2011.6142610
