• DocumentCode
    3198743
  • Title

    Spin dependent charge pumping: A new tool for reliability studies

  • Author

    Bittel, B.C. ; Lenahan, P.M. ; Ryan, J.T. ; Fronheiser, J. ; Lelis, A.J.

  • Author_Institution
    Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2011
  • fDate
    16-20 Oct. 2011
  • Firstpage
    142
  • Lastpage
    145
  • Abstract
    We have developed a new technique, spin dependent charge (SDCP) pumping which combines the unrivaled analytical power of EPR to identify the atomic scale nature of point defects with charge pumping, a widely used electrical characterization technique used to study interface/near interface defects in MOSFETs. We demonstrate SDCP to be a very powerful tool with potential to be of widespread use to the MOSFET reliability community.
  • Keywords
    MOSFET; charge pump circuits; semiconductor device reliability; EPR; MOSFET reliability community; SDCP; spin dependent charge pumping; Charge pumps; Logic gates; MOSFETs; Magnetic field measurement; Sensitivity; Silicon; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4577-0113-9
  • Type

    conf

  • DOI
    10.1109/IIRW.2011.6142610
  • Filename
    6142610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3198743