• DocumentCode
    3198905
  • Title

    Surface Activated Bonding between Au layer and vertically aligned Multi-Wall Carbon Nanotubes

  • Author

    Fujino, Masahisa ; Suga, Tadatomo ; Soga, Ikuo ; Kond, Daiyu ; Ishizuki, Yoshikatsu ; Iwai, Taisuke ; Mizukoshi, Masataka

  • Author_Institution
    Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2010
  • fDate
    13-16 Sept. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this research, vertically aligned Muti-Walled Carbon Nanotubes (CNTs) and Au-layer were bonded by Surface Activated Bonding method. Vertically aligned CNTs were grown by acetylene-CVD with Fe catalyst and were formed bump shape with 200 μm diameter and around 200 μm height. These CNT bumps and Au layer were cleaned and activated by Argon Fast Atom Beam (Ar-FAB) process and bonded with some load. As a result, MWNTs-Au bonding was succeeded on condition that CNT bumps and Au layer were Ar-FAB processed longer than 300 sec, and bonding pressure was larger than 0.17 MPa, and the average resistance of CNT was 130 kΩ. Furthermore, when the bonding pressure was 0.7 MPa, the average resistance of one was 16 Ω.
  • Keywords
    bonding processes; carbon nanotubes; catalysis; chemical vapour deposition; gold; Au; C; acetylene-CVD; argon fast atom beam process; average resistance; bonding pressure; catalyst; surface activated bonding; vertically aligned multiwall carbon nanotubes; Area measurement; Gold; Heating; Pumps; Semiconductor device measurement; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic System-Integration Technology Conference (ESTC), 2010 3rd
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4244-8553-6
  • Electronic_ISBN
    978-1-4244-8554-3
  • Type

    conf

  • DOI
    10.1109/ESTC.2010.5642937
  • Filename
    5642937