DocumentCode
3198905
Title
Surface Activated Bonding between Au layer and vertically aligned Multi-Wall Carbon Nanotubes
Author
Fujino, Masahisa ; Suga, Tadatomo ; Soga, Ikuo ; Kond, Daiyu ; Ishizuki, Yoshikatsu ; Iwai, Taisuke ; Mizukoshi, Masataka
Author_Institution
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
fYear
2010
fDate
13-16 Sept. 2010
Firstpage
1
Lastpage
4
Abstract
In this research, vertically aligned Muti-Walled Carbon Nanotubes (CNTs) and Au-layer were bonded by Surface Activated Bonding method. Vertically aligned CNTs were grown by acetylene-CVD with Fe catalyst and were formed bump shape with 200 μm diameter and around 200 μm height. These CNT bumps and Au layer were cleaned and activated by Argon Fast Atom Beam (Ar-FAB) process and bonded with some load. As a result, MWNTs-Au bonding was succeeded on condition that CNT bumps and Au layer were Ar-FAB processed longer than 300 sec, and bonding pressure was larger than 0.17 MPa, and the average resistance of CNT was 130 kΩ. Furthermore, when the bonding pressure was 0.7 MPa, the average resistance of one was 16 Ω.
Keywords
bonding processes; carbon nanotubes; catalysis; chemical vapour deposition; gold; Au; C; acetylene-CVD; argon fast atom beam process; average resistance; bonding pressure; catalyst; surface activated bonding; vertically aligned multiwall carbon nanotubes; Area measurement; Gold; Heating; Pumps; Semiconductor device measurement; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic System-Integration Technology Conference (ESTC), 2010 3rd
Conference_Location
Berlin
Print_ISBN
978-1-4244-8553-6
Electronic_ISBN
978-1-4244-8554-3
Type
conf
DOI
10.1109/ESTC.2010.5642937
Filename
5642937
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