Title :
Inter-symbol interference (ISI) in on-die transmission lines
Author :
Rysin, A. ; Livshits, P. ; Sofer, S. ; Mantel, O. ; Shapira, Y. ; Fefer, Y.
Abstract :
The waveforms of a signal transmitted through single-ended on-die transmission lines, implemented by standard metal layers of a CMOS 45 nm technology node, have been experimentally studied. The influence of the active loss level of the lines, as well as of the impedance mismatch between the transmission line and its driver upon the signal distortion, and particularly upon the inter-symbol interference, is discussed.
Keywords :
CMOS integrated circuits; VLSI; distortion; impedance matching; integrated circuit interconnections; intersymbol interference; transmission lines; CMOS technology; VLSI; active loss level; impedance mismatch; intersymbol interference; metal layers; on-die transmission lines; signal distortion; signal transmitted waveforms; size 45 nm; CMOS technology; Dielectric losses; Distortion; Impedance; Intersymbol interference; Power transmission lines; Propagation losses; Repeaters; Transmission lines; Very large scale integration; VLSI; global wiring; inter-symbol interference; on-chip interconnections; on-chip transmission line; transmission line;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4244-3985-0
DOI :
10.1109/COMCAS.2009.5385987
