Reaction analysis of the formation of CIS at temperatures from 250 to 400°C

Author

Orbey, N. ; Hichri, H. ; Birkmire, R.W. ; Russell, TWF

Author_Institution

Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA

fYear

1996

fDate

13-17 May 1996

Firstpage

981

Lastpage

984

Abstract

A chemical reaction analysis of the selenization of copper indium layers to form copper indium diselenide is presented. Time progressive selenizations were carried out in a tubular laminar flow reactor in a dilute H₂Se atmosphere at 250, 325 and 400°C. The reacted films were analyzed by X-ray diffraction and atomic absorption spectroscopy. The chemical species present in the reacted films were identified and a reaction network for film formation is proposed. The data from time progressive selenizations were analyzed to obtain species concentration profiles. Rate expressions were postulated and a mathematical model for the selenization was developed. The behavior of the model is compared with the experimentally determined species concentrations to obtain specific reaction rate constants at each temperature and the activation energies. This information is needed for the design and process control of commercial scale selenization reactors

Keywords

CVD coatings; X-ray diffraction; chemical reactions; copper compounds; indium compounds; reaction rate constants; semiconductor growth; semiconductor thin films; ternary semiconductors; 250 C; 325 C; 400 C; CuInSe₂; X-ray diffraction; atomic absorption spectroscopy; chemical reaction analysis; concentration profiles; film formation; mathematical model; rate expressions; selenization; time progressive selenization; tubular laminar flow reactor; Atmosphere; Atomic layer deposition; Chemical analysis; Computational Intelligence Society; Copper; Electromagnetic wave absorption; Indium; Inductors; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564294

Filename

564294