A 360 degree phase shifter for 60 GHz application in SiGe BiCMOS technology

Author

Sun, Yaoming ; Scheytt, Christoph J.

Author_Institution

Circuit Design Dept., IHP, Frankfurt (Oder), Germany

fYear

2009

fDate

9-11 Nov. 2009

Firstpage

1

Lastpage

4

Abstract

This paper presents a voltage controlled phase shifter in a 0.25 Â¿m SiGe BiCMOS technology for 60 GHz applications. Vector combination technique is adopted in phase shifter core. Continuous 360 degree phase tuning from 40 GHz to 70 GHz has been measured. The insertion gain of the complete test circuits is 4.6 dB and that of the phase shifter core is 7.6 dB. The phase shifter is best suited for 60 GHz phased array systems. To the authors´ knowledge, this is the first phase shifter of this type for 60 GHz applications.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; bipolar MIMIC; field effect MIMIC; millimetre wave phase shifters; BiCMOS technology; SiGe; continuous 360-degree phase tuning; frequency 40 GHz to 60 GHz; gain 4.6 dB; gain 7.6 dB; phased array systems; size 0.25 mum; vector combination technique; voltage controlled phase shifter; BiCMOS integrated circuits; Circuit synthesis; Delay; Frequency; Germanium silicon alloys; Phase measurement; Phase shifters; Phased arrays; Silicon germanium; Voltage control; 60 GHz; millimeter wave; phase shifter; phased array; vector combining;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on

Conference_Location

Tel Aviv

Print_ISBN

978-1-4244-3985-0

Type

conf

DOI

10.1109/COMCAS.2009.5385997

Filename

5385997