Numerical Modeling of the I-V Characteristic of Carbon Nanotube Field Effect Transistors (CNT-FETs)

Using derived equations for the potential description for carbon nanotube field effect transistors (CNT-FETs), basic semiconductor equations for carbon nanotubes have been used to model the charge transport. The carbon nanotube has been modeled as a line of charge, and a numerical model has been implemented for the current transport. This numerical model uses MATLAB capabilities to solve the given current and voltage equations numerically and presents I-V characteristics for any given CNT-FET.