Title :
Biocompatibility assessment of advanced wafer-level based chip encapsulation
Author :
Dy, Eric ; Vos, Rita ; Rip, Jens ; La Manna, Antonio ; De Beeck, Maaike Op
Author_Institution :
Imec, Leuven, Belgium
Abstract :
Next generation implantable microsystem-based medical devices will have different packaging requirements than current implantable devices such as pace makers. While the packaging must remain biocompatible and provide a bi-directional diffusion barrier, it must also permit the biosensors, microelectrodes, etc to intimately interact with the extracellular environment. A CMOS compatible wafer level packaging strategy for die encapsulation has been developed and tested. TXRF measurements of 3T3 culture medium used in elution testing at physiological temperatures indicate the stack of PECVD diffusion barriers (SiC, SiN, SiO2) are effective in limiting Cu from leaching from the device. Additionally live-dead cell assays on in vitro co-cultures with both 3T3 fibroblasts and neonatal rat cardiomyocytes demonstrate the effectiveness of the different diffusion barrier stacks in preventing cytotoxic conditions.
Keywords :
CMOS integrated circuits; X-ray fluorescence analysis; biomedical electronics; cellular biophysics; diffusion barriers; integrated circuit packaging; plasma CVD coatings; prosthetics; silicon compounds; wafer level packaging; wide band gap semiconductors; 3T3 culture medium; 3T3 fibroblasts; CMOS compatible wafer level packaging; PECVD diffusion barriers; SiC; SiN; SiO2; TXRF; bidirectional diffusion barrier; biocompatibility assessment; die encapsulation; elution testing; extracellular environment; implantable microsystem-based medical devices; in vitro cocultures; leaching; live-dead cell assays; neonatal rat cardiomyocytes; packaging requirements; physiological temperatures; wafer-level based chip encapsulation; Atomic measurements; Biology; Biosensors; CMOS integrated circuits; Cardiology; Copper; Pollution measurement;
Conference_Titel :
Electronic System-Integration Technology Conference (ESTC), 2010 3rd
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-8553-6
Electronic_ISBN :
978-1-4244-8554-3
DOI :
10.1109/ESTC.2010.5642972