III-V solar cell growth on wafer-bonded GaAs/Si-substrates

Author

Schone, J. ; Dimroth, F. ; Bett, A.W. ; Tauzin, A. ; Jaussaud, C. ; Roussin, J.C.

Author_Institution

Fraunhofer Inst. for Solar Energy Syst., Freiburg

Volume

1

fYear

2006

fDate

38838

Firstpage

776

Lastpage

779

Abstract

The MOVPE (Metal Organic Vapour Phase Epitaxy) growth of GaAs single-junction solar cells on layer transferred GaAs/Si-substrates is reported. This novel type of alternative substrates for III-V epitaxial growth was realised by performing the Smart Cuttrade technology. HRXRD-measurements proved good material quality by a FWHM of about 30 arcsecond reveal a dislocation density below 4times10⁵ cm ^-2 for a 5 mum thick GaAs layer. Due to the formation of cracks the performance of GaAs single-junction solar cells has only been in the range of 12 %

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; cracks; dislocation density; gallium arsenide; semiconductor growth; solar cells; vapour phase epitaxial growth; wafer bonding; FWHM; GaAs-Si; HRXRD; III-V epitaxial growth; III-V solar cell growth; MOVPE; Si; cracks; dislocation density; high resolution X-ray diffraction; metal organic vapour phase epitaxial growth; single-junction solar cells; wafer-bonding; Epitaxial growth; Gallium arsenide; III-V semiconductor materials; Lattices; Optical microscopy; Photovoltaic cells; Rough surfaces; Substrates; Transmission electron microscopy; Wafer bonding; GaAs solar cell; GaAs-on-Si; dislocation density;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279571

Filename

4059744