Title :
Ku-band 10 W high efficiency HJFET power amplifier
Author :
Matsunaga, Kaori ; Okamoto, Yuji ; Kuzuhara, Masaaki
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
This paper describes a record power performance of a Ku-band power amplifier fabricated with a one-chip 0.45 /spl mu/m gate GaAs-based heterojunction FET (HJFET). The developed HJFET amplifier with 16.8 mm gate periphery exhibited a 40.1 dBm (10.2 W) output power with 50% power-added efficiency (PAE) and 9.5 dB linear gain at 12 GHz. This is the highest PAE, gain and output power combination achieved by a single FET power amplifier at this frequency.<>
Keywords :
III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; microwave power amplifiers; 0.45 micron; 10 W; 12 GHz; 50 percent; 9.5 dB; GaAs; HJFET power amplifier; Ku-band; gate periphery; heterojunction FET; linear gain; output power; power-added efficiency; Breakdown voltage; FETs; Gallium arsenide; Heterojunctions; High power amplifiers; MESFETs; Microwave devices; Performance gain; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405975
