A 2.2 GS/s 900 MHz bandpass delta-sigma modulator for Class-S power amplifier

Author

Ostrovskyy, P. ; Borokhovych, Y. ; Fischer, G. ; Gustat, H. ; Scheytt, Ch

Author_Institution

IHP GmbH, Frankfurt (Oder), Germany

fYear

2009

fDate

9-11 Nov. 2009

Firstpage

1

Lastpage

4

Abstract

A fourth-order bandpass delta-sigma modulator (BDSM) is designed for operating at decreased sampling frequency to relax the requirements of the power amplification stage in Class-S power amplifier. The modulator is fabricated in 0.25 um SiGe BiCMOS technology and achieves 43.8 dB signal-to-noise ratio (SNR) in 10 MHz bandwidth with sine wave input, while dissipating 380 mW from -2.8 V supply. For a WCDMA modulated signal the modulator demonstrates 3% of EVM.

Keywords

BiCMOS integrated circuits; delta-sigma modulation; modulators; power amplifiers; SiGe BiCMOS technology; WCDMA modulated signal; bandwidth 10 MHz; class-S power amplifier; dissipation; fourth-order bandpass delta-sigma modulator; frequency 900 MHz; power 380 mW; power amplification stage; sampling frequency; sine wave input; size 0.25 mum; voltage -2.8 V; wideband code division multiple access; Bandwidth; BiCMOS integrated circuits; Delta modulation; Frequency; Germanium silicon alloys; Multiaccess communication; Power amplifiers; Sampling methods; Signal to noise ratio; Silicon germanium; Class-S; WCDMA; bandpass ADC; continuous time; power amplifiers; sigma-delta modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on

Conference_Location

Tel Aviv

Print_ISBN

978-1-4244-3985-0

Type

conf

DOI

10.1109/COMCAS.2009.5386047

Filename

5386047