DocumentCode :
3200252
Title :
3D Modeling of Concentrator III-V Multi-Junction Solar Cells
Author :
Baudrit, Mathieu ; Algora, Carlos
Author_Institution :
Inst. de Energia Solar, Univ. Politecnica de Madrid
Volume :
1
fYear :
2006
fDate :
38838
Firstpage :
826
Lastpage :
829
Abstract :
Concentration based on III-V solar cells is one of the most promising technologies to reduce cost of PV electricity. To achieve high efficiency making a better use of the solar spectrum and under very high concentration, multijunction solar cells are explored at the IES-UPM. To give a real understanding of all the phenomena occurring inside these devices, the development of a reliable theoretical model is essential. In this paper we present the first results obtained in our laboratory simulating lattice-matched GaInP/GaAs dual junction solar cells. To achieve these results we numerically analyze the complete structure including the tunnel junction
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor device models; semiconductor heterojunctions; solar cells; solar energy concentrators; 3D modeling; GaInP-GaAs; IES-UPM; PV electricity; concentrator III-V multijunction solar cells; simulating lattice-matched semiconductor dual junction solar cells; solar spectrum; tunnel junction; Analytical models; Gallium arsenide; III-V semiconductor materials; Laboratories; Lighting; Metallization; Photovoltaic cells; Predictive models; Radiative recombination; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279584
Filename :
4059757
Link To Document :
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