DocumentCode
3200351
Title
Nanoporous interconnects
Author
Oppermann, Hermann ; Dietrich, Lothar ; Klein, Matthias ; Wunderle, Bernhard
Author_Institution
Fraunhofer IZM, Berlin, Germany
fYear
2010
fDate
13-16 Sept. 2010
Firstpage
1
Lastpage
4
Abstract
Nanoporous gold bumps have been deposited on silicon wafers by electroplating a silver-gold alloy followed by etching the silver. An open-porous cellular structure of gold at meso-scale is left on top of the bumps. For flip chip bonding we found low temperature and low force bonding conditions. The porous interconnects have very promising properties, like compressibility and reduced stiffness, which should result in higher bond yield and extended reliability.
Keywords
electroplating; gold alloys; integrated circuit interconnections; nanoporous materials; silver alloys; wafer bonding; AgAu; electroplating; flip chip bonding; force bonding condition; nanoporous gold bumps; nanoporous interconnect; open porous cellular structure; silicon wafers; silver etching; silver-gold alloy; Bonding; Fires; Jamming; Materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic System-Integration Technology Conference (ESTC), 2010 3rd
Conference_Location
Berlin
Print_ISBN
978-1-4244-8553-6
Electronic_ISBN
978-1-4244-8554-3
Type
conf
DOI
10.1109/ESTC.2010.5643002
Filename
5643002
Link To Document