DocumentCode
3200481
Title
Efficiency Enhancement of Single Junction GAAS Solar Cells using Strain-Balanced Quantum Well Structures Under Concentration
Author
Tibbits, Thomas N D ; Ballard, Ian ; Barnham, Keith W J ; Johnson, David C. ; Mazzer, Massimo ; Roberts, John S. ; Airey, Rob ; Foa, Nigel
Author_Institution
Dept. of Phys., Imperial Coll. of Sci. Technol. & Med., London
Volume
1
fYear
2006
fDate
38838
Firstpage
861
Lastpage
864
Abstract
GaAs based strain-balanced quantum well solar cells (SB-QWSCs) have been shown to enhance efficiency compared to a bulk control cell, if the overall photocurrent increase is not offset by the reduction in open-circuit voltage. Here we demonstrate the performance of QWSC in light fluxes of up to 400 suns equivalent. The QWSC maintains additivity (the total current is the sum of dark current and the photocurrent) at these concentration levels and we demonstrate an efficiency of 27.0% at 328 suns for a SB-QWSC under the low aerosol optical density spectrum (AOD). The SB-QWSC is a p-i-n structure with 50 In0.1Ga0.9As wells in the i-region and a 20 period staircase distributed Bragg reflector (DBR) optimized to reflect light in the stop-band range of (880-930) nm. The entire device is grown monolithically in a robot-loading 7times2 Thomas Swan Shower-Head Reactor recently commissioned at the University of Sheffield
Keywords
III-V semiconductors; aerosols; gallium arsenide; indium compounds; photoconductivity; semiconductor quantum wells; solar cells; 27 percent; 880 to 930 nm; GaAs; In0.1Ga0.9As; SB-QWSC; Thomas Swan Shower-Head Reactor; aerosol optical density spectrum; dark current; open-circuit voltage; photocurrent; semiconductor based strain-balanced quantum well solar cells; single junction solar cells; staircase distributed Bragg reflector; Aerosols; Dark current; Distributed Bragg reflectors; Gallium arsenide; PIN photodiodes; Photoconductivity; Photovoltaic cells; Strain control; Sun; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
1-4244-0017-1
Electronic_ISBN
1-4244-0017-1
Type
conf
DOI
10.1109/WCPEC.2006.279593
Filename
4059766
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