DocumentCode
3200485
Title
Fast and noise-aware power-up for on-die power gated domains
Author
Sofer, Sergey ; Tzytkin, Dov ; Neiman, Valery ; Melamed-Kohen, Eyal
Author_Institution
Freescale Semicond. Israel Ltd., Herzelia, Israel
fYear
2009
fDate
9-11 Nov. 2009
Firstpage
1
Lastpage
5
Abstract
On-die PSO is used for leakage power reduction. The power-up process at PSO exit (gated supply voltage recovery) is usually designed to be relatively slow process. This is done in order to keep quiet continuous power supply of always powered-on devices. We propose a way of acceleration the power-up, while holding the continuous power supply at acceptable level of noise. This is achieved by monitoring the IR droop level of the continuous power supply. It allows significant reduction of the power-up time with no functionality impact. The theoretical background, the arrangement schematics and the simulation results are presented.
Keywords
leakage currents; power consumption; power supplies to apparatus; IR droop level; continuous power supply; gated supply voltage recovery; leakage power reduction; noise-aware power-up; on-die power gated domains; power shut-off technique; power-up time; powered-on devices; Energy consumption; MOS capacitors; MOSFET circuits; Power MOSFET; Power supplies; Semiconductor device noise; Switches; Switching circuits; Very large scale integration; Voltage; IR droop; PSO; power gating; power-up; switch control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on
Conference_Location
Tel Aviv
Print_ISBN
978-1-4244-3985-0
Type
conf
DOI
10.1109/COMCAS.2009.5386067
Filename
5386067
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