Title :
Fabrication of GaInNAs-based Solar Cells for Application to Multi-junction Tandem Solar Cells
Author :
Miyashita, Naoya ; Shimizu, Yukiko ; Kobayashi, Naoto ; Okada, Yoshitaka ; Yamaguchi, Masafumi
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ.
Abstract :
We have investigated the characteristics of p-GaAs/i-n-Ga0.97 In0.03N0.01As0.99 heterojunction solar cells with different intrinsic layer thickness. The solar cells studied in this study were fabricated by atomic hydrogen-assisted RF-MBE on GaAs(001) substrates. With an optimized i-layer thickness of 600nm, maximum quantum efficiency of > 80% has been obtained, and the hole diffusion length in n-Ga0.97In0.03N0.01As0.99 film was ~160nm. Then we fabricated our first homojunction GaInNAs solar cells, and short-circuit current density of 14.2 mA/cm2 has been achieved
Keywords :
Hall mobility; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; solar cells; thin film devices; wide band gap semiconductors; 600 nm; GaAs; GaAs(001) substrates; GaAs-Ga0.97In0.03N0.01As 0.99; GaInNAs; atomic hydrogen-assisted RF-MBE; dilute nitride semiconductors; heterojunction solar cells; hole diffusion length; homojunction solar cells; intrinsic layer; multijunction tandem solar cells; quantum efficiency; semiconductor-based solar cells fabrication; short-circuit current density; Atomic layer deposition; Degradation; Fabrication; Gallium arsenide; Heterojunctions; Nitrogen; Optical films; Optical scattering; Photonic band gap; Photovoltaic cells; Dilute nitride semiconductors; Multi-junction solar cells; RF-MBE;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279595
